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  Datasheet File OCR Text:
 BAV100...BAV103
Vishay Telefunken
Silicon Epitaxial Planar Diodes
Applications
General purposes
94 9371
Absolute Maximum Ratings
Tj = 25_C Parameter Repetitive peak reverse voltage g Test Conditions Type BAV100 BAV101 BAV102 BAV103 BAV100 BAV101 BAV102 BAV103 Symbol VRRM VRRM VRRM VRRM VR VR VR VR IFSM IFRM IF PV Tj Tstg Value 60 120 200 250 50 100 150 200 1 625 250 500 175 -65...+175 Unit V V V V V V V V A mA mA mW C C
Reverse voltage g
Peak forward surge current Repetitive peak forward current Forward current Power dissipation Junction temperature Storage temperature range
tp=1s
Maximum Thermal Resistance
Tj = 25_C Parameter Junction lead Junction ambient Test Conditions on PC board 50mmx50mmx1.6mm Symbol RthJL RthJA Value 350 500 Unit K/W K/W
Document Number 85542 Rev. 2, 01-Apr-99
www.vishay.de * FaxBack +1-408-970-5600 1 (4)
BAV100...BAV103
Vishay Telefunken Electrical Characteristics
Tj = 25_C Parameter Forward voltage Reverse current Test Conditions IF=100mA VR=50V VR=100V VR=150V VR=200V Tj=100C, VR= 50V Tj=100C, VR=100V Tj=100C, VR=150V Tj=100C, VR=200V IR=100mA, tp/T=0.01, m tp=0.3ms Type BAV100 BAV101 BAV102 BAV103 BAV100 BAV101 BAV102 BAV103 BAV100 BAV101 BAV102 BAV103 Symbol VF IR IR IR IR IR IR IR IR V(BR) V(BR) V(BR) V(BR) CD rf trr Min Typ Max 1 100 100 100 100 15 15 15 15 Unit V nA nA nA nA
mA mA mA mA
V V V V pF
Breakdown voltage g
60 120 200 250 1.5 5 50
Diode capacitance Differential forward resistance Reverse recovery time
VR=0, f=1MHz IF=10mA IF=IR=30mA, iR=3mA, RL=100W
W
ns
Characteristics (Tj = 25_C unless otherwise specified)
1000 IF - Forward Current ( mA ) I R - Reverse Current ( mA ) 100 Scattering Limit 10 1000 Tj = 25C 100 Scattering Limit 10
1 VR = VRRM
0.1 0.01 0 40 80 120
1
0.1 160 200
94 9085
0
0.4
0.8
1.2
1.6
2.0
94 9084
Tj - Junction Temperature ( C )
VF - Forward Voltage ( V )
Figure 1. Reverse Current vs. Junction Temperature
Figure 2. Forward Current vs. Forward Voltage
www.vishay.de * FaxBack +1-408-970-5600 2 (4)
Document Number 85542 Rev. 2, 01-Apr-99
BAV100...BAV103
Vishay Telefunken
rf - Differential Forward Resistance (W ) 1000
100
Tj = 25C 10
1 0.1
94 9089
1
10
100
IF - Forward Current ( mA )
Figure 3. Differential Forward Resistance vs. Forward Current
Dimensions in mm
96 12070
Document Number 85542 Rev. 2, 01-Apr-99
www.vishay.de * FaxBack +1-408-970-5600 3 (4)
BAV100...BAV103
Vishay Telefunken Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
www.vishay.de * FaxBack +1-408-970-5600 4 (4)
Document Number 85542 Rev. 2, 01-Apr-99


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